X1G004801005100愛普生車規(guī)晶振編碼SG2016CAN 12M CMOS -40 to 105 °C
X1G004801005100 Epson Code SG2016CAN 12M CMOS-40 to 105 °C
 愛普生現(xiàn)已推出SG2016系列高頻、低相位抖動(dòng)SPXO s樣品-該系列比愛普生的SG2520系列SPXO s小54%,是800G收發(fā)器等高帶寬光模塊的理想選擇-日本東京2022年10月12日關(guān)于愛普生愛普生是全球技術(shù)領(lǐng)導(dǎo)者,其高效、緊湊和精確創(chuàng)新的理念豐富了生活,并有助于創(chuàng)造一個(gè)更美好的世界.該公司致力于通過家庭和辦公印刷、商業(yè)和工業(yè)印刷、制造、視覺和生活方式的創(chuàng)新來解決社會(huì)問題.到2050年,愛普生晶振將成為負(fù)碳公司,不再使用石油和金屬等可耗盡的地下資源.由日本精工愛普生公司領(lǐng)導(dǎo)的全球愛普生集團(tuán)年銷售額超過1萬億日元.
Epson has launched SG2016 series of high frequency, low phase jitter SPXO s samples-the series is 54% smaller than Epson's SG2520 series SPXO s, is the ideal choice of 800G transceiver high bandwidth optical module-Tokyo on October 12,2022 about Epson Epson is a global technology leader, its efficient, compact and accurate innovation concept enriched life, and help to create a better world. The company is committed to solving social problems through innovations in home and office printing, commercial and industrial printing, manufacturing, visual, and lifestyle initiatives. By 2050, Epson would become a negative carbon company and would no longer use depletable underground resources such as oil and metals. The Global Epson Group, led by Seiko Epson, has annual sales of more than 1 trillion yen.
 Seiko Epson Corporation(TSE:6724,Epson已經(jīng)開始發(fā)運(yùn)具有差分輸出1的新系列簡(jiǎn)單封裝晶體振蕩器(SPXO)的樣品.該系列包括SG2016EGN、SG2016EHN、SG2016VGN和SG2016VHN.所有器件在基本模式3下均具有低相位抖動(dòng)2,并采用2.0x1.6毫米的小型封裝,高度為0.63毫米(典型值.).計(jì)劃于2023年(日歷年)第一季度開始量產(chǎn).
Seiko Epson Corporation (TSE: 6724, Epson has started shipping samples of a new series of simple-packaged crystal oscillators (SPXO) with differential output 1. The series includes the SG2016EGN, SG2016EHN, SG2016VGN, and SG2016VHN. All devices with low phase jitter 2 in base mode 3 and a small 2.0x1.6 mm package with a height of 0.63 mm (typical value). ). Mass production is scheduled to begin in the first quarter of 2023 (calendar year).
X1G004801005100愛普生車規(guī)晶振編碼,SG2016CAN 12M CMOS -40 to 105 °C晶振

 由于5G網(wǎng)絡(luò)的增長(zhǎng)和物聯(lián)網(wǎng)(IoT)的實(shí)施,未來的數(shù)據(jù)流量將進(jìn)一步增加.為了處理這種流量,光傳輸模塊被期望過渡到更高的速度和更大的容量,從400Gbps到800Gbps.下一代800G光傳輸模塊將需要更小,因?yàn)樗鼈儗?nèi)置更大的數(shù)字信號(hào)處理器(DSP),這將需要更多的散熱空間.有源晶振新振蕩器的體積比其前身Epson的SG2520EGN、SG2520EHN、SG2520VGN和SG2520VHN小54%.像他們的前輩一樣,他們使用了一個(gè)HFF晶體單元4和一個(gè)由愛普生公司設(shè)計(jì)的緊湊型振蕩器IC.它們還提供相同的高頻、高穩(wěn)定性和低相位抖動(dòng).這些特性使它們成為下一代800G傳輸模塊的理想選擇.作為石英晶體設(shè)備的領(lǐng)導(dǎo)者,愛普生尋求利用其技術(shù)為實(shí)現(xiàn)智能社會(huì)做出貢獻(xiàn),并將繼續(xù)提供滿足各種電子設(shè)備和社會(huì)基礎(chǔ)設(shè)施需求的晶體設(shè)備產(chǎn)品.
Due to the growth of 5G networks and the implementation of the Internet of Things (IoT). To handle this flow, optical transmission modules are expected to transition to higher speeds and greater capacity, from 400Gbps to 800Gbps. The next generation of 800G optical transmission modules will need to be smaller because they will have larger digital signal processors (DSP) built-in, which will require more heat dissipation space. The volume of the new oscillator is 54% smaller than the SG2520EGN, SG2520EHN, SG2520VGN, and SG2520VHN of its predecessor Epson. Like their predecessors, they used an HFF crystal unit 4 and a compact oscillator, I C, designed by Epson. They also provide the same high frequency, high stability, and low phase jitter. These features make them ideal for the next generation of 800G transmission modules. As a leader in quartz crystal equipment, Epson seeks to use its technology to contribute to the realization of a smart society, and will continue to provide crystal equipment products that meet the needs of a variety of electronic devices and social infrastructure.
X1G004801005100愛普生車規(guī)晶振編碼,SG2016CAN 12M CMOS -40 to 105 °C晶振

愛普生有源晶振編碼	型號(hào)	頻率	長(zhǎng)X寬X高	輸出波	電源電壓	工作溫度
X1G004801005000	SG2016CAN	12.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G004801005100	SG2016CAN	12.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801005200	SG2016CAN	12.288000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G004801005300	SG2016CAN	12.288000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801005400	SG2016CAN	14.745600 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G004801005500	SG2016CAN	14.745600 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801005600	SG2016CAN	16.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801005700	SG2016CAN	20.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G004801005800	SG2016CAN	20.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G004801005900	SG2016CAN	24.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G004801006000	SG2016CAN	24.576000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G004801006100	SG2016CAN	27.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G004801006200	SG2016CAN	32.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G004801006300	SG2016CAN	32.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801006400	SG2016CAN	33.330000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G004801006500	SG2016CAN	33.330000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801006600	SG2016CAN	33.333300 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801006700	SG2016CAN	40.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G004801006800	SG2016CAN	48.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G004801006900	SG2016CAN	48.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G004801007000	SG2016CAN	50.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G004801007100	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.710 to 3.630 V	-20 to 70 °C
X1G004801007200	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.710 to 3.630 V	-40 to 85 °C
X1G004801007300	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	2.250 to 3.630 V	-40 to 105 °C
X1G004801007600	SG2016CAN	32.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C

 產(chǎn)品應(yīng)用-光傳輸模塊(內(nèi)置于路由器和交換機(jī)等網(wǎng)絡(luò)設(shè)備中)-數(shù)據(jù)中心-工廠自動(dòng)化設(shè)備和測(cè)量?jī)x器-高速數(shù)模轉(zhuǎn)換器相關(guān)鏈接
Product applications-Optical transmission module (built into network equipment such as routers and switches) -Data center-Factory automation equipment and measuring instruments-high-speed digital-to-analog converter related links
 請(qǐng)查看下面的產(chǎn)品詳情鏈接.
Please see the product details link below.
 1差分輸出:輸出極性相反的頻率信號(hào)的方法.差分晶振輸出實(shí)現(xiàn)高頻傳輸,抗噪聲能力強(qiáng).
1 Differential output: a method to output frequency signals with opposite polarity. Differential output realizes high-frequency transmission and has strong noise resistance.
 2抖動(dòng):時(shí)鐘周期的波動(dòng)會(huì)導(dǎo)致顯示圖像波動(dòng)和數(shù)據(jù)傳輸中的誤碼等問題.
2. Jitter: The fluctuation of the clock period can lead to problems such as display image fluctuation and code error in data transmission.
 3基模:晶體單位振動(dòng)的自然頻率.
3 Base mode: the natural frequency of the crystal unit vibration.
 4高頻基波(HFF)晶體單元:一種可以以高頻基波振蕩而不損害晶體芯片強(qiáng)度的晶體單元,因?yàn)槭褂霉饪坦に噥韯?chuàng)建倒臺(tái)面結(jié)構(gòu),其中只有晶體芯片的振動(dòng)區(qū)域被減薄到幾微米的厚度.HFF晶體單元有助于高速、大容量通信的穩(wěn)定性,因?yàn)樗鼈兛梢砸种聘浇闹C波分量.
4. High frequency base wave (HFF) crystal unit: A crystal unit that can oscillate with a high frequency base wave without compromising the strength of the crystal chip by using a lithography process to create an inverted mesa structure, where only the vibrational area of the crystal chip is reduced to a thickness of a few microns. HFF crystal units contribute to the stability of high-speed, large-capacity communication because they can suppress nearby harmonic components.
X1G004801005100愛普生車規(guī)晶振編碼,SG2016CAN 12M CMOS -40 to 105 °C石英晶體振蕩器